Trager-Cowan, C., Alasmari, A., Avis, W. et al. (33 more authors) (2019) Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. Photonics Research, 7 (11). B73-B82.
Abstract
In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.
Metadata
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Copyright, Publisher and Additional Information: | © 2019 The Authors. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License (https://creativecommons.org/licenses/by/4.0/). Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. | ||||||||
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Institution: | The University of Sheffield | ||||||||
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) | ||||||||
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Depositing User: | Symplectic Sheffield | ||||||||
Date Deposited: | 18 Nov 2019 13:20 | ||||||||
Last Modified: | 18 Nov 2019 13:20 | ||||||||
Status: | Published | ||||||||
Publisher: | The Optical Society | ||||||||
Refereed: | Yes | ||||||||
Identification Number: | https://doi.org/10.1364/prj.7.000b73 |