Field plate designs in all-GaN cascode heterojunction field-effect transistors

Jiang, S. orcid.org/0000-0002-3687-1882, Lee, K.B. orcid.org/0000-0002-5374-2767, Zaidi, Z.H. et al. (3 more authors) (2019) Field plate designs in all-GaN cascode heterojunction field-effect transistors. IEEE Transactions on Electron Devices, 66 (4). pp. 1688-1693. ISSN 0018-9383

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Copyright, Publisher and Additional Information: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.
Keywords: Power electronics; semiconductor devices; semiconductor heterojunctions; semiconductor switches
Dates:
  • Accepted: 1 February 2019
  • Published (online): 21 February 2019
  • Published: April 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 28 Feb 2019 16:39
Last Modified: 18 Nov 2021 14:44
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: https://doi.org/10.1109/ted.2019.2897602

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