Field plate designs in all-GaN cascode heterojunction field-effect transistors

Jiang, S. orcid.org/0000-0002-3687-1882, Lee, K.B. orcid.org/0000-0002-5374-2767, Zaidi, Z.H. et al. (3 more authors) (2019) Field plate designs in all-GaN cascode heterojunction field-effect transistors. IEEE Transactions on Electron Devices. ISSN 0018-9383

Abstract

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Keywords: Power electronics; semiconductor devices; semiconductor heterojunctions; semiconductor switches
Dates:
  • Accepted: 1 February 2019
  • Published (online): 21 February 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 28 Feb 2019 16:39
Last Modified: 28 Feb 2019 16:39
Published Version: https://doi.org/10.1109/ted.2019.2897602
Status: Published online
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: https://doi.org/10.1109/ted.2019.2897602

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