Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device

Metadata

Item Type:	Article
Authors/Creators:	Zheng, B. Croxall, A.F. Waldie, J. Das Gupta, K. Sfigakis, F. Farrer, I. https://orcid.org/0000-0002-3033-4306 Beere, H.E. Ritchie, D.A.
Copyright, Publisher and Additional Information:	© 2016 AIP Publishing LLC. Reproduced in accordance with the publisher's self-archiving policy.
Dates:	Accepted: 29 January 2016 Published: 8 February 2016
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User:	Symplectic Sheffield
Date Deposited:	13 Oct 2017 09:25
Last Modified:	13 Oct 2017 09:25
Published Version:	https://doi.org/10.1063/1.4941760
Status:	Published
Publisher:	American Institute of Physics
Refereed:	Yes
Identification Number:	10.1063/1.4941760
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:122282

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