Real-time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

Griffo, A. orcid.org/0000-0001-5642-2921, Wang, J., Colombage, K. et al. (1 more author) (2017) Real-time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs. IEEE Transactions on Industrial Electronics. ISSN 0278-0046

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2017 Institute of Electrical and Electronics Engineers. This is an author produced version of a paper subsequently published in IEEE Transactions on Industrial Electronics. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: Power semiconductor devices; Condition monitoring; Power MOSFETs; Temperature measurements
Dates:
  • Published (online): 14 August 2017
  • Accepted: 10 August 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
EUROPEAN COMMISSION - HORIZON 2020I2MPECT - 636170
Depositing User: Symplectic Sheffield
Date Deposited: 12 Jul 2017 13:29
Last Modified: 29 Jun 2018 14:45
Published Version: https://doi.org/10.1109/TIE.2017.2739687
Status: Published online
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: https://doi.org/10.1109/TIE.2017.2739687

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