Double-layer-gate architecture for few-hole GaAs quantum dots

Wang, D.Q., Hamilton, A.R., Farrer, I. orcid.org/0000-0002-3033-4306 et al. (2 more authors) (2016) Double-layer-gate architecture for few-hole GaAs quantum dots. Nanotechnology, 27 (33). ISSN 0957-4484

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Copyright, Publisher and Additional Information: © 2016 IOP Publishing. This is an author produced version of a paper subsequently published in Nanotechnology. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Published: 8 July 2016
  • Accepted: 20 June 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 01 Aug 2016 12:15
Last Modified: 19 Jul 2017 01:35
Published Version: http://dx.doi.org/10.1088/0957-4484/27/33/334001
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/0957-4484/27/33/334001

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