Wang, D.Q., Hamilton, A.R., Farrer, I. orcid.org/0000-0002-3033-4306 et al. (2 more authors) (2016) Double-layer-gate architecture for few-hole GaAs quantum dots. Nanotechnology, 27 (33). ISSN 0957-4484
Abstract
We report the fabrication of single and double hole quantum dots using a double-layer-gate design on an undoped accumulation mode AlxGa1-xAs/GaAs heterostructure. Electrical transport measurements of a single quantum dot show varying addition energies and clear excited states. In addition, the two-level-gate architecture can also be configured into a double quantum dot with tunable inter-dot coupling.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | © 2016 IOP Publishing. This is an author produced version of a paper subsequently published in Nanotechnology. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
|
Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 01 Aug 2016 12:15 |
Last Modified: | 19 Jul 2017 01:35 |
Published Version: | http://dx.doi.org/10.1088/0957-4484/27/33/334001 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.1088/0957-4484/27/33/334001 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:103204 |