Characterization of p-GaN1-xAsx/n-GaN PN junction diodes

Qian, H., Lee, K.B., Hosseini Vajargah, S. et al. (7 more authors) (2016) Characterization of p-GaN1-xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31 (6). 065020. ISSN 0268-1242

Abstract

Metadata

Authors/Creators:
  • Qian, H.
  • Lee, K.B.
  • Hosseini Vajargah, S.
  • Novikov, S.V.
  • Guiney, I.
  • Zhang, S.
  • Zaidi, Z.H.
  • Jiang, S.
  • Wallis, D.J.
  • Foxon, C.T.
Copyright, Publisher and Additional Information: © 2016 IOP Publishing. This is an author produced version of a paper subsequently published in Semiconductor Science and Technology. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: GaN; PN diode; conduction mechanism; p-type doping; amorphous GaNAs
Dates:
  • Published: 12 May 2016
  • Accepted: 28 April 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 02 Jun 2016 15:06
Last Modified: 10 May 2017 00:38
Published Version: https://dx.doi.org/10.1088/0268-1242/31/6/065020
Status: Published
Publisher: IOP Publishing
Identification Number: https://doi.org/10.1088/0268-1242/31/6/065020

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