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Number of items: 8.

Article

Partida-Manzanera, T., Zaidi, Z.H., Roberts, J.W. et al. (6 more authors) (2019) Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. Journal of Applied Physics, 126 (3). 034102. ISSN 0021-8979

Jiang, S. orcid.org/0000-0002-3687-1882, Lee, K.B. orcid.org/0000-0002-5374-2767, Zaidi, Z.H. et al. (3 more authors) (2019) Field plate designs in all-GaN cascode heterojunction field-effect transistors. IEEE Transactions on Electron Devices. ISSN 0018-9383

Zaidi, Z.H., Lee, K.B. orcid.org/0000-0002-5374-2767, Roberts, J.W. et al. (9 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics , 123 (18). 184503. ISSN 0021-8979

Jiang, S., Lee, K.B., Guiney, I. et al. (7 more authors) (2017) All-GaN Integrated Cascode Heterojunction Field Effect Transistors. IEEE Transactions on Power Electronics. ISSN 0885-8993

Qian, H. orcid.org/0000-0003-4597-6325, Lee, K.B., Vajargah, S.H. et al. (8 more authors) (2017) Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Journal of Crystal Growth, 459. pp. 185-188. ISSN 0022-0248

Qian, H., Lee, K.B., Hosseini Vajargah, S. et al. (7 more authors) (2016) Characterization of p-GaN1-xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31 (6). 065020. ISSN 0268-1242

Lee, K.B., Guiney, I., Jiang, S. et al. (7 more authors) (2015) Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0V and blocking voltage above 1000V. Applied Physics Express, 8 (3). 036502. ISSN 1882-0778

Zaidi, Z.H., Lee, K.B., Guiney, I. et al. (5 more authors) (2014) Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors. Journal of Applied Physics, 116. 244501. ISSN 0021-8979

This list was generated on Sun Oct 13 15:30:01 2019 BST.