Items where authors include "Yin, Y."

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Number of items: 9.

Article

Yin, Y., Pinchbeck, J., O'Regan, C. et al. (3 more authors) (2022) Fabrication of semi-polar (11-22) GaN V-groove MOSFET using wet etching trench opening technique. IEEE Electron Device Letters, 43 (10). pp. 1641-1644. ISSN 0741-3106

Yin, Y., Thwaites, K. and Simpson, J. (2022) Exploring the use of restorative component scale to measure street restorative expectations. URBAN DESIGN International, 27 (2). pp. 145-155. ISSN 1357-5317

Yin, Y., Thwaites, K. orcid.org/0000-0002-2597-4544 and Shao, Y. (2022) Balancing street functionality and restorative benefit : developing an expectation–current approach to street design. Sustainability, 14 (9). 5736.

Yin, Y. and Lee, K.B. orcid.org/0000-0002-5374-2767 (2022) High-performance enhancement-mode p-channel GaN MISFETs with steep subthreshold swing. IEEE Electron Device Letters, 43 (4). pp. 533-536. ISSN 0741-3106

Wohlfahrt, M., Uren, M.J., Yin, Y. et al. (2 more authors) (2021) Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks. Applied Physics Letters, 119 (24). 243502. ISSN 0003-6951

Jiang, S., Lee, K.B. orcid.org/0000-0002-5374-2767, Pinchbeck, J. et al. (2 more authors) (2020) A 624 V 5 A all‐GaN integrated cascode for power‐switching applications. physica status solidi (a), 217 (7). 1900783. ISSN 1862-6300

Zamani, E. orcid.org/0000-0003-3110-7495, Choudrie, J., Katechos, G. et al. (1 more author) (2019) Trust in the sharing economy : the AirBnB case. Industrial Management & Data Systems, 119 (9). pp. 1947-1968. ISSN 0263-5577

Yang, H., Dobbie, S., Ramirez‐Villegas, J. et al. (11 more authors) (2016) Potential negative consequences of geoengineering on crop production: a study of Indian groundnut. Geophysical Research Letters, 43 (22). 11,786-11,795. ISSN 0094-8276

Yin, Y., Carslaw, K.S. and Parker, D.J. (2002) Redistribution of trace gases by convective clouds - mixed-phase processes. Atmospheric Chemistry and Physics, 2 (4). pp. 293-306. ISSN 1680-7324

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