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Number of items: 9.

Article

Yi, X., Xie, S., Liang, B. et al. (6 more authors) (2019) Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes. Nature Photonics. ISSN 1749-4885

Yi, X., Xie, S., Liang, B. et al. (6 more authors) (2018) Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Scientific Reports, 8 (1). 9107. ISSN 2045-2322

Xu, L., Carrer, A., Zonta, F. et al. (25 more authors) (2017) Design and Characterization of a Human Monoclonal Antibody that Modulates Mutant Connexin 26 Hemichannels Implicated in Deafness and Skin Disorders. Frontiers in Molecular Neuroscience , 10. 298. ISSN 1662-5099

Zhou, X., Tan, C.H., Zhang, S. et al. (4 more authors) (2017) Thin Al 1− Ga As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown. Royal Society Open Science, 4. 170071. p. 170071.

Xie, S., Zhou, X. orcid.org/0000-0001-9022-5032, Zhang, S. et al. (5 more authors) (2016) InGaAs/AlGaAsSb avalanche photodiode with high gain - bandwidth product. Optics Express, 24 (21). pp. 24242-24247. ISSN 1094-4087

Meng, X., Xie, S., Zhou, X. et al. (5 more authors) (2016) InGaAs/InAlAs single photon avalanche diode for 1550 nm photons. Royal Society Open Science, 3 (3). 150584. ISSN 2054-5703

Xie, S., Zhang, S. and Tan, C.H. (2015) InGaAs/InAlAs Avalanche Photodiode With Low Dark Current for High-Speed Operation. IEEE Photonics Technology Letters, 27 (16). 1745 - 1748. ISSN 1041-1135

Sandall, I.C., Ng, J.S., Xie, S. et al. (2 more authors) (2013) Temperature dependence of impact ionization in InAs. Optics Express, 21 (7). 8630 - 8637. ISSN 1094-4087

Xie, S. and Tan, C.H. (2011) AlAsSb avalanche photodiodes with a sub-mV/K temperature coefficient of breakdown voltage. IEEE Journal of Quantum Electronics, 47 (11). pp. 1391-1395. ISSN 0018-9197

This list was generated on Sun Aug 18 22:12:00 2019 BST.