Browse by Person

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Jump to: Article
Number of items: 3.

Article

Choi, F.S., Griffiths, J.T., Ren, C. et al. (7 more authors) (2018) Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Journal of Applied Physics, 124 (5). 055702. ISSN 0021-8979

Khalid, N., Kim, J.Y., Ionescu, A. et al. (7 more authors) (2018) Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure. Journal of Applied Physics, 123 (10). 103901. ISSN 0021-8979

Tang, F.Z., Lee, K. orcid.org/0000-0002-5374-2767, Guiney, I. et al. (11 more authors) (2018) Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Journal of Applied Physics, 123 (2). 024902. ISSN 0021-8979

This list was generated on Mon Jul 22 00:42:59 2019 BST.