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Choi, F.S., Griffiths, J.T., Ren, C. et al. (7 more authors) (2018) Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Journal of Applied Physics, 124 (5). 055702. ISSN 0021-8979

Khalid, N., Kim, J.Y., Ionescu, A. et al. (7 more authors) (2018) Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure. Journal of Applied Physics, 123 (10). 103901. ISSN 0021-8979

Tang, F.Z., Lee, K., Guiney, I. et al. (11 more authors) (2018) Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Journal of Applied Physics, 123 (2). 024902. ISSN 0021-8979

This list was generated on Mon Jan 20 05:43:31 2020 GMT.