Items where authors include "Narayanan, E.M.S."

Article

Tan, Q.Y. orcid.org/0000-0002-9272-983X and Narayanan, E.M.S. orcid.org/0000-0001-6832-1300 (2021) Evaluation of gate drive circuit effect in cascode GaN-based application. Bulletin of the Polish Academy of Sciences : Technical Sciences, 69 (2). e136742. ISSN 0239-7528

Unni, V., Long, H.Y., Yan, H. et al. (3 more authors) (2018) Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs. IET Power Electronics, 11 (14). pp. 2198-2203. ISSN 1755-4535

Kawai, H., Yagi, S., Hirata, S. et al. (7 more authors) (2017) Low cost high voltage GaN polarization superjunction field effect transistors. Physica Status Solidi (a), 214 (8). 1600834. ISSN 1862-6300

Baltynov, T., Unni, V. and Narayanan, E.M.S. (2016) The world’s first high voltage GaN-on-Diamond power semiconductor devices. Solid-State Electronics, 125. pp. 111-117. ISSN 0038-1101

Proceedings Paper

Alwash, M., Sweet, M. and Narayanan, E.M.S. orcid.org/0000-0001-6832-1300 (2017) Analysis of Voltage Source Converters Under DC Line-to-Line Short-Circuit Fault Conditions. In: Electric Machines and Drives Conference (IEMDC), 2017 IEEE International. 2017 IEEE International Electric Machines and Drives Conference (IEMDC), 21-24 May 2017, Miami, FL. IEEE , pp. 1801-1806.

Luo, P., Long, H.Y., Sweet, M.R. et al. (2 more authors) (2017) Analysis of a Clustered IGBT and Silicon Carbide MOSFET Hybrid Switch. In: Industrial Electronics (ISIE), 2017 IEEE 26th International Symposium on. 2017 IEEE 26th International Symposium on Industrial Electronics (ISIE), 19-21 Jun 2017, Edinburgh, UK. IEEE , pp. 612-615.

Long, H.Y., Sweet, M.R., Narayanan, E.M.S. orcid.org/0000-0001-6832-1300 et al. (1 more author) (2017) Reliability Study and Modelling of IGBT Press-Pack Power Modules. In: Applied Power Electronics Conference and Exposition (APEC), 2017 IEEE. 2017 IEEE Applied Power Electronics Conference and Exposition (APEC 2017), 26-30 Mar 2017, Tampa Convention Center, Tampa, Florida. IEEE , pp. 2711-2717.

Unni, V. and Narayanan, E.M.S. orcid.org/0000-0001-6832-1300 (2017) Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis. In: Japanese Journal of Applied Physics. 2016 International Conference on Solid State Devices and Materials (SSDM2016), 26/09/2016 - 29/09/2016, Tsukuba, Japan. Japan Society of Applied Physics .

Sweet, M.R., Narayanan, E.M.S. orcid.org/0000-0001-6832-1300 and Menon, K. (2017) Impact of poly-crystalline diamond within power semiconductor device modules in a converter. In: 2016 IEEE Energy Conversion Congress and Exposition (ECCE). 2016 IEEE Energy Conversion Congress and Exposition (ECCE), 18-22 Sep 2016, Milwaukee, WI, USA. IEEE . ISBN 9781509007370