Performance of a high resolution chemically amplified electron beam resist at various beam energies

Yang, DX, Frommhold, A, McClelland, A et al. (6 more authors) (2016) Performance of a high resolution chemically amplified electron beam resist at various beam energies. Microelectronic Engineering, 155. pp. 97-101. ISSN 0167-9317

Abstract

Metadata

Authors/Creators:
  • Yang, DX
  • Frommhold, A
  • McClelland, A
  • Roth, J
  • Rosamond, M
  • Linfield, EH
  • Osmond, J
  • Palmer, RE
  • Robinson, APG
Copyright, Publisher and Additional Information: (c) 2016 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
Keywords: electron beam lithography; molecular resist; chemically amplification; electron beam energy
Dates:
  • Published: 2 April 2016
  • Accepted: 3 March 2016
  • Published (online): 5 March 2016
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Communication & Power Networks (Leeds)
The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 29 Apr 2016 09:54
Last Modified: 01 Apr 2018 07:35
Published Version: http://dx.doi.org/10.1016/j.mee.2016.03.010
Status: Published
Publisher: Elsevier
Identification Number: https://doi.org/10.1016/j.mee.2016.03.010

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