Towards 11 nm half-pitch Resolution for a Negative-tone Chemically Amplified Molecular Resist Platform for EUV Lithography

Frommhold, A, McClelland, A, Yang, D et al. (5 more authors) (2015) Towards 11 nm half-pitch Resolution for a Negative-tone Chemically Amplified Molecular Resist Platform for EUV Lithography. In: Wallow, TI and Hohle, CK, (eds.) Proceedings of SPIE. Advances in Patterning Materials and Processes XXXII, 23-26 Feb 2015, San Jose, California, USA. Society of Photo-optical Instrumentation Engineers (SPIE) . ISBN 9781628415278

Abstract

Metadata

Authors/Creators:
  • Frommhold, A
  • McClelland, A
  • Yang, D
  • Palmer, RE
  • Roth, J
  • Ekinci, Y
  • Rosamund, MC
  • Robinson, APG
Copyright, Publisher and Additional Information: © 2015 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: EUV Lithography; Molecular Resist; Chemically Amplified Resist
Dates:
  • Published: 2015
  • Published (online): 20 March 2015
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Communication & Power Networks (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 25 Oct 2016 14:07
Last Modified: 26 Jan 2018 15:54
Published Version: https://doi.org/10.1117/12.2193847
Status: Published
Publisher: Society of Photo-optical Instrumentation Engineers (SPIE)
Identification Number: https://doi.org/10.1117/12.2085672

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