Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

Zaidi, Z.H., Lee, K.B., Guiney, I. et al. (5 more authors) (2014) Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors. Journal of Applied Physics, 116. 244501. ISSN 0021-8979

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Copyright, Publisher and Additional Information: © 2014 American Institute of Physics (AIP). This is an author produced version of a paper subsequently published in Journal of Applied Physics. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Published: 28 December 2014
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 01 Jun 2016 08:46
Last Modified: 20 Mar 2018 22:09
Published Version: http://dx.doi.org/10.1063/1.4904923
Status: Published
Publisher: American Institute of Physics (AIP)
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.4904923
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