Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications

Mowbray, D.J. and Orchard, J.R. (2016) Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications. In: SPIE Proceedings. Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII, February 13, 2016, San Francisco, California, United States. SPIE .

Abstract

Metadata

Authors/Creators:
  • Mowbray, D.J.
  • Orchard, J.R.
Copyright, Publisher and Additional Information: Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Dates:
  • Published: 25 March 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)EP/J012882/1
Depositing User: Symplectic Sheffield
Date Deposited: 26 Apr 2016 14:36
Last Modified: 24 Mar 2018 16:27
Published Version: http://dx.doi.org/10.1117/12.2209693
Status: Published
Publisher: SPIE
Refereed: Yes
Identification Number: https://doi.org/10.1117/12.2209693

Share / Export

Statistics