In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates

Orchard, J.R., Shutts, S., Sobiesierski, A. et al. (9 more authors) (2016) In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics Express, 24 (6). p. 6196. ISSN 1094-4087

Abstract

Metadata

Authors/Creators:
  • Orchard, J.R.
  • Shutts, S.
  • Sobiesierski, A.
  • Wu, J.
  • Tang, M.
  • Chen, S.
  • Jiang, Q.
  • Elliott, S.
  • Beanland, R.
  • Liu, H.
  • Smowton, P.M.
  • Mowbray, D.J.
Copyright, Publisher and Additional Information: © 2016 Optical Society of America.
Dates:
  • Published: 21 March 2016
  • Published (online): 11 March 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)EP/J012882/1
Depositing User: Symplectic Sheffield
Date Deposited: 17 May 2016 14:05
Last Modified: 03 Nov 2016 17:53
Published Version: http://dx.doi.org/10.1364/OE.24.006196
Status: Published
Publisher: Optical Society of America
Refereed: Yes
Identification Number: https://doi.org/10.1364/OE.24.006196

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