The interface of a-SiNx:H and Si: Linking the nano-scale structure to passivation quality

Lamers, M., Hintzsche, L.E., Butler, K.T. et al. (7 more authors) (2014) The interface of a-SiNx:H and Si: Linking the nano-scale structure to passivation quality. Solar Energy Materials and Solar Cells, 120 (Part A). pp. 311-316. ISSN 0927-0248

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Copyright, Publisher and Additional Information: © 2013 Elsevier. This is an author produced version of a paper subsequently published in Solar Energy Materials and Solar Cells. Uploaded in accordance with the publisher's self-archiving policy. Article available under the terms of the CC-BY-NC-ND licence (https://creativecommons.org/licenses/by-nc-nd/4.0/)
Keywords: Silicon nitride; Passivation; Interface; Nitridation; Fixed charge
Dates:
  • Published: 1 January 2014
  • Published (online): 24 May 2013
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Materials Science and Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 08 Apr 2016 13:44
Last Modified: 10 Apr 2016 06:24
Published Version: https://dx.doi.org/10.1016/j.solmat.2013.04.026
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: https://doi.org/10.1016/j.solmat.2013.04.026

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