Persistent template effect in InAs/GaAs quantum dot bilayers

Clarke, E., Howe, P., Taylor, M. et al. (7 more authors) (2010) Persistent template effect in InAs/GaAs quantum dot bilayers. Journal of Applied Physics, 107 (11). 113502. ISSN 0021-8979

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2010 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy.
Keywords: gallium arsenide; III-V semiconductors; indium compounds; molecular beam epitaxial growth; quantum dots; semiconductor growth; 1.3 MU-M; GAAS; STRAIN; EMISSION; ISLANDS; GROWTH; LASERS; SIZE
Dates:
  • Published: 1 June 2010
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 20 Apr 2016 13:32
Last Modified: 20 Apr 2016 13:32
Published Version: http://dx.doi.org/10.1063/1.3429226
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.3429226

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