Influence of p-doping on the temperature dependence of In As/GaAs quantum dot excited state radiative lifetime

Harbord, E., Iwamoto, S., Arakawa, Y. et al. (3 more authors) (2012) Influence of p-doping on the temperature dependence of In As/GaAs quantum dot excited state radiative lifetime. Applied Physics Letters, 101. 183108. ISSN 0003-6951

Abstract

Metadata

Authors/Creators:
  • Harbord, E.
  • Iwamoto, S.
  • Arakawa, Y.
  • Spencer, P.
  • Clarke, E.
  • Murray, R.
Copyright, Publisher and Additional Information: © 2012 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy.
Dates:
  • Published (online): 2 November 2012
  • Accepted: 18 October 2012
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 26 Apr 2016 08:57
Last Modified: 26 Apr 2016 09:00
Published Version: http://dx.doi.org/10.1063/1.4765349
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.4765349
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