WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature

Withers, F., Del Pozo-Zamudio, O., Schwarz, S. et al. (15 more authors) (2015) WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature. Nano Letters, 15 (12). pp. 8223-8228. ISSN 1530-6984

Abstract

Metadata

Authors/Creators:
  • Withers, F.
  • Del Pozo-Zamudio, O.
  • Schwarz, S.
  • Dufferwiel, S.
  • Walker, P.M.
  • Godde, T.
  • Rooney, A.P.
  • Gholinia, A.
  • Woods, C.R.
  • Blake, P.
  • Haigh, S.J.
  • Watanabe, K.
  • Taniguchi, T.
  • Aleiner, I.L.
  • Geim, A.K.
  • Fal'ko, V.I.
  • Tartakovskii, A.I.
  • Novoselov, K.S.
Copyright, Publisher and Additional Information: © 2015 American Chemical Society. This is an author produced version of a paper subsequently published in Nano Letters . Uploaded in accordance with the publisher's self-archiving policy.
Keywords: Electroluminescence; photoluminescence; transition metal dichalcogenides; tungsten diselenide; hexagonal boron nitride; graphene; van der Waals heterostructure
Dates:
  • Published: December 2015
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Funding Information:
FunderGrant number
EUROPEAN COMMISSION - FP6/FP7604391
Depositing User: Symplectic Sheffield
Date Deposited: 26 Jan 2016 12:19
Last Modified: 15 Nov 2016 20:17
Published Version: http://dx.doi.org/10.1021/acs.nanolett.5b03740
Status: Published
Publisher: American Chemical Society
Refereed: Yes
Identification Number: https://doi.org/10.1021/acs.nanolett.5b03740
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