The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy

Tsui, H.C.L., Goff, L.E., Barradas, N.P. et al. (7 more authors) (2015) The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy. physica status solidi (a), 212 (12). 2837 - 2842. ISSN 1862-6300

Abstract

Metadata

Authors/Creators:
  • Tsui, H.C.L.
  • Goff, L.E.
  • Barradas, N.P.
  • Alves, E.
  • Pereira, S.
  • Beere, H.E.
  • Farrer, I.
  • Nicoll, C.A.
  • Ritchie, D.A.
  • Moram, M.A.
Copyright, Publisher and Additional Information: © 2015 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim. This is an author produced version of a paper subsequently published in physica status solidi (a) . Uploaded in accordance with the publisher's self-archiving policy.
Keywords: metal-rich growth; molecular beam epitaxy; scandium gallium nitrides; thin films; transmission electron microscopy
Dates:
  • Published: 1 December 2015
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 18 Jan 2016 13:32
Last Modified: 16 Nov 2016 16:30
Published Version: http://dx.doi.org/10.1002/pssa.201532292
Status: Published
Publisher: Wiley-VCH Verlag
Refereed: Yes
Identification Number: https://doi.org/10.1002/pssa.201532292

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