Tsui, H.C.L., Goff, L.E., Barradas, N.P. et al. (7 more authors) (2015) The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy. physica status solidi (a), 212 (12). 2837 - 2842. ISSN 1862-6300
Abstract
Epitaxial ScxGa1-xN films with 0 ≤ x ≤ 0.50 were grown using molecular beam epitaxy under metal-rich conditions. The ScxGa1-xN growth rate increased with increasing Sc flux despite the use of metal-rich growth conditions, which is attributed to the catalytic decomposition of N2 induced by the presence of Sc. Microstructural analysis showed that phase-pure wurtzite ScxGa1-xN was achieved up to x = 0.26, which is significantly higher than that previously reported for nitrogen-rich conditions, indicating that the use of metal-rich conditions can help to stabilise wurtzite phase ScxGa1-xN.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2015 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim. This is an author produced version of a paper subsequently published in physica status solidi (a) . Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | metal-rich growth; molecular beam epitaxy; scandium gallium nitrides; thin films; transmission electron microscopy |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 18 Jan 2016 13:32 |
Last Modified: | 16 Nov 2016 16:30 |
Published Version: | http://dx.doi.org/10.1002/pssa.201532292 |
Status: | Published |
Publisher: | Wiley-VCH Verlag |
Refereed: | Yes |
Identification Number: | 10.1002/pssa.201532292 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:93558 |