Del Pozo-Zamudio, O., Schwarz, S., Sich, M. et al. (12 more authors) (2015) Photoluminescence of two-dimensional GaTe and GaSe films. 2D Materials, 2 (3). 035010. ISSN 2053-1583
Abstract
Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report on the low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thicknesses ranging from 200 nm to a single unit cell. In both materials, PL shows a dramatic decrease by 10e4–10e5 when film thickness is reduced from 200 to 10 nm. Based on evidence from continuous-wave (cw) and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states. Our results emphasize the need for special passivation of two-dimensional films for optoelectronic applications.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2015 IOP Publishing Ltd. Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence (http://creativecommons.org/licenses/by/3.0/). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 10 Dec 2015 16:07 |
Last Modified: | 10 Dec 2015 16:07 |
Published Version: | http://dx.doi.org/10.1088/2053-1583/2/3/035010 |
Status: | Published |
Publisher: | IOP Publishing Ltd |
Refereed: | Yes |
Identification Number: | 10.1088/2053-1583/2/3/035010 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:92736 |