Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices

Grier, A, Valavanis, A, Edmunds, C et al. (8 more authors) (2015) Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices. Journal of Applied Physics, 118 (22). 224308. ISSN 0021-8979

Abstract

Metadata

Authors/Creators:
  • Grier, A
  • Valavanis, A
  • Edmunds, C
  • Shao, J
  • Cooper, JD
  • Gardner, G
  • Manfra, MJ
  • Malis, O
  • Indjin, D
  • Ikonic, Z
  • Harrison, P
Copyright, Publisher and Additional Information: © 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 118, 224308 (2015) and may be found at http://dx.doi.org/10.1063/1.4936962. Reproduced in accordance with the publisher's self-archiving policy.
Dates:
  • Published: 14 December 2015
  • Accepted: 20 November 2015
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 01 Dec 2015 14:11
Last Modified: 18 Jan 2018 18:23
Published Version: http://dx.doi.org/10.1063/1.4936962
Status: Published
Publisher: American Institute of Physics (AIP)
Identification Number: https://doi.org/10.1063/1.4936962

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