Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

Bazioti, C., Papadomanolaki, E., Kehagias, T. et al. (7 more authors) (2015) Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy. Journal of Applied Physics, 118 (15). ISSN 1089-7550

Abstract

Metadata

Authors/Creators:
  • Bazioti, C.
  • Papadomanolaki, E.
  • Kehagias, T.
  • Walther, T.
  • Smalc-Koziorowska, J.
  • Pavlidou, E.
  • Komninou, P.
  • Karakostas, T.
  • Iliopoulos, E.
  • Dimitrakopulos, G.P.
Copyright, Publisher and Additional Information: © 2015 AIP Publishing LLC. Reproduced in accordance with the publisher's self-archiving policy.
Dates:
  • Published: 16 October 2015
  • Accepted: 3 July 2015
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 18 Nov 2015 14:03
Last Modified: 18 Nov 2015 14:03
Published Version: http://dx.doi.org/10.1063/1.4933276
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.4933276

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