Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping

Kepaptsoglou, D, Hardcastle, TP, Seabourne, CR et al. (8 more authors) (2015) Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping. ACS Nano, 9 (11). pp. 11398-11407. ISSN 1936-0851

Abstract

Metadata

Authors/Creators:
  • Kepaptsoglou, D
  • Hardcastle, TP
  • Seabourne, CR
  • Bangert, U
  • Zan, R
  • Amani, JA
  • Hofsass, H
  • Nicholls, RJ
  • Brydson, RMD
  • Scott, AJ
  • Ramasse, QM
Copyright, Publisher and Additional Information: © 2015 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acsnano.5b05305. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: graphene; doping; electronic structure; STEM; EELS; ab initio calculations; DFT
Dates:
  • Published: 24 November 2015
  • Accepted: 8 October 2015
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Chemical & Process Engineering (Leeds) > Institute for Materials Research (Leeds)
Funding Information:
FunderGrant number
EPSRCn/a
Depositing User: Symplectic Publications
Date Deposited: 03 Nov 2015 14:13
Last Modified: 16 Nov 2016 07:59
Published Version: http://dx.doi.org/10.1021/acsnano.5b05305
Status: Published
Publisher: American Chemical Society
Identification Number: https://doi.org/10.1021/acsnano.5b05305

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