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Avalanche multiplication in AlxGa1-xAs (x=0to0.60)

Plimmer, S.A., David, J.P.R., Grey, R. and Rees, G.J. (2000) Avalanche multiplication in AlxGa1-xAs (x=0to0.60). IEEE Transactions on Electron Devices, 47 (5). pp. 1089-1097. ISSN 0018-9383

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Abstract

Electron and hole multiplication characteristics, Me and Mh, have been measured in AlxGa1-xAs (x=0-0.60) homojunction p+-i-n+ diodes with i-region thicknesses, w, from 1 μm to 0.025 μm and analyzed using a Monte Carlo model (MC). The effect of the composition on both the macroscopic multiplication characteristics and microscopic behavior is therefore shown for the first time. Increasing the alloy fraction causes the multiplication curves to be shifted to higher voltages such that the multiplication curves at any given thickness are practically parallel for different x. The Me/Mh ratio also decreases as x increases, varying from ~2 to ~1 as x increases from 0 to 0.60 in a w=1 μm p+-i-n+. The Monte-Carlo model is also used to extract ionization coefficients and dead-space distances from the measured results which cover electric field ranges from ~250 kV/cm-1200 kV/cm in each composition. These parameters can be used to calculate the nonlocal multiplication process by solving recurrence equations. Limitations to the applicability of field-dependent ionization coefficients are shown to arise however when the electric-field profile becomes highly nonuniform

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: avalanche diodes, avalanche photodiodes, hot carriers, impact ionization, Monte Carlo methods
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 20 Dec 2005
Last Modified: 08 Feb 2013 16:48
Published Version: http://dx.doi.org/10.1109/16.841245
Status: Published
Refereed: Yes
Identification Number: 10.1109/16.841245
URI: http://eprints.whiterose.ac.uk/id/eprint/909

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