The merits and limitations of local impact ionization theory

Plimmer, S.A., David, J.P.R. and Ong, D.S. (2000) The merits and limitations of local impact ionization theory. IEEE Transactions on Electron Devices, 47 (5). pp. 1080-1088. ISSN 0018-9383



  • Plimmer, S.A.
  • David, J.P.R.
  • Ong, D.S.
Copyright, Publisher and Additional Information: Copyright © 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: avalanche diodes, avalanche photodiodes, hot carriers, impact ionization, Monte Carlo methods, power semiconductor devices
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 20 Dec 2005
Last Modified: 04 Jun 2014 17:53
Published Version:
Status: Published
Refereed: Yes
Identification Number:


Filename: davidjpr17.pdf

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