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Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes

Tan, C.H., David, J.P.R., Plimmer, S.A., Rees, G.J., Tozer, R.C. and Grey, R. (2001) Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes. IEEE Transactions on Electron Devices, 48 (7). pp. 1310-1317. ISSN 0018-9383

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Abstract

Avalanche multiplication and excess noise were measured on a series of Al0.6Ga0.4As p+in+ and n+ip+ diodes, with avalanche region thickness, w ranging from 0.026 μm to 0.85 μm. The results show that the ionization coefficient for electrons is slightly higher than for holes in thick, bulk material. At fixed multiplication values the excess noise factor was found to decrease with decreasing w, irrespective of injected carrier type. Owing to the wide Al0.6Ga0.4As bandgap extremely thin devices can sustain very high electric fields, giving rise to very low excess noise factors, of around F~3.3 at a multiplication factor of M~15.5 in the structure with w=0.026 μm. This is the lowest reported excess noise at this value of multiplication for devices grown on GaAs substrates. Recursion equation modeling, using both a hard threshold dead space model and one which incorporates the detailed history of the ionizing carriers, is used to model the nonlocal nature of impact ionization giving rise to the reduction in excess noise with decreasing w. Although the hard threshold dead space model could reproduce qualitatively the experimental results, better agreement was obtained from the history-dependent model

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Al0.6Ga0.4As, avalanche photodiodes, excess noise, impact ionization
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 20 Dec 2005
Last Modified: 06 Jun 2014 02:48
Published Version: http://dx.doi.org/10.1109/16.930644
Status: Published
Refereed: Yes
Identification Number: 10.1109/16.930644
URI: http://eprints.whiterose.ac.uk/id/eprint/906

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