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Avalanche multiplication characteristics of Al0.8Ga0.2As diodes

Ng, B.K., David, J.P.R., Plimmer, S.A., Rees, G.J., Tozer, R.C., Hopkinson, M. and Hill, G. (2001) Avalanche multiplication characteristics of Al0.8Ga0.2As diodes. IEEE Transactions on Electron Devices, 48 (10). pp. 2198-2204. ISSN 0018-9383

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Abstract

The avalanche multiplication characteristics of Al0.8Ga 0.2As have been investigated in a series of p-i-n and n-i-p diodes with i-region widths, w, varying from 1 μm to 0.025 μm. The electron ionization coefficient, α, is found to be consistently higher than the hole ionization coefficient, β, over the entire range of electric fields investigated. By contrast with AlxGa1-xAs (x≤0.6) a significant difference between the electron and hole initiated multiplication characteristics of very thin Al0.8Ga0.2As diodes (w=0.025 μm) was observed. Dead space effects in the diodes with w≤0.1 μm were found to reduce the multiplication at low bias below the values predicted from bulk ionization coefficients. Effective α and β that are independent of w have been deduced from measurements and are able to reproduce accurately the multiplication characteristics of diodes with w≥0.1 μm and breakdown voltages of all diodes with good accuracy. By performing a simple correction for the dead space, the multiplication characteristics of even thinner diodes were also predicted with reasonable accuracy

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: AlGaAs, APD, avalanche multiplication, avalanche photodiodes, ionization coefficients, impact ionization
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 20 Dec 2005
Last Modified: 09 Jun 2014 06:03
Published Version: http://dx.doi.org/10.1109/16.954454
Status: Published
Refereed: Yes
Identification Number: 10.1109/16.954454
URI: http://eprints.whiterose.ac.uk/id/eprint/905

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