GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

Chen, S., Li, W., Zhang, Z. et al. (9 more authors) (2015) GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures. Nanoscale Research Letters, 10. 340. ISSN 1556-276X

Abstract

Metadata

Authors/Creators:
  • Chen, S.
  • Li, W.
  • Zhang, Z.
  • Childs, D.
  • Zhou, K.
  • Orchard, J.
  • Kennedy, K.
  • Hugues, M.
  • Clarke, E.
  • Ross, I.
  • Wada, O.
  • Hogg, R.
Copyright, Publisher and Additional Information: © 2015 Chen et al. Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Keywords: Superluminescent Light-Emitting Diode; Quantum well; Quantum dot
Dates:
  • Published: 25 August 2015
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 05 Oct 2015 15:41
Last Modified: 05 Oct 2015 15:41
Published Version: http://dx.doi.org/10.1186/s11671-015-1049-2
Status: Published
Publisher: SpringerOpen
Refereed: Yes
Identification Number: https://doi.org/10.1186/s11671-015-1049-2
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