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Excess noise characteristics of Al0.8Ga0.2As avalanche photodiodes

Ng, B.K., David, J.P.R., Tozer, R.C., Hopkinson, M., Hill, G. and Rees, G.J. (2002) Excess noise characteristics of Al0.8Ga0.2As avalanche photodiodes. IEEE Photonics Technology Letters, 14 (4). pp. 522-524. ISSN 1041-1135


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The avalanche noise characteristics of Al0.8Ga0.2 As have been measured in a range of p-i-n and n-i-p diodes with i-region widths ω varying from 1.02 to 0.02 μm. While thick bulk diodes exhibit low excess noise from electron initiated multiplication, owing to the large α/β ratio (1/k), the excess noise of diodes with ω < 0.31 μm were found to be greatly reduced by the effects of dead space. The thinnest diodes exhibit very low excess noise, corresponding to k = 0.08, up to a multiplication value of 90. In contrast to most III-V materials, it was found that both thick and thin Al0.8Ga0.2As multiplication layers can give very low excess noise and that electrons must initiate multiplication to minimize excess noise, even in thin structures

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Al0.8Ga0.2As, APD, avalanche excess noise, avalanche multiplication, impact ionization, indirect band gap
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 19 Dec 2005
Last Modified: 11 Jun 2014 06:46
Published Version: http://dx.doi.org/10.1109/68.992598
Status: Published
Refereed: Yes
Identification Number: 10.1109/68.992598
URI: http://eprints.whiterose.ac.uk/id/eprint/904

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