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Extremely low excess noise in InAs electron avalanche photodiodes

Marshall, A., Tan, C.H, Steer, M. and David, J.P.R (2009) Extremely low excess noise in InAs electron avalanche photodiodes. IEEE Photonics Technology Letters, 21 (13). pp. 866-868. ISSN 1041-1135

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Abstract

Measurements of the avalanche multiplication noise in InAs p-i-n and n-i-p diodes at room temperature demonstrate unambiguously that the avalanche multiplication process is dominated by impact ionization of electrons. This results in the excess noise factor for electron initiated multiplication asymptotically approaching a maximum value just less than two and becoming virtually gain-independent for higher gains. Measurements for predominantly hole initiated multiplication show corresponding high excess noise factors suggesting the electron to hole ionization coefficient ratios are comparable to those reported for Hg1-xCdxTe electron avalanche photodiodes.

Item Type: Article
Copyright, Publisher and Additional Information: © Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Avalanche photodiodes (APDs); impact ionization
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 03 Aug 2009 14:18
Last Modified: 06 Jun 2014 09:15
Published Version: http://dx.doi.org/10.1109/LPT.2009.2019625
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: 10.1109/LPT.2009.2019625
URI: http://eprints.whiterose.ac.uk/id/eprint/9032

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