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Effect of dead space on avalanche speed

Ng, J.S., Tan, C.H., Ng, B.K., Hambleton, P.J., David, J.P.R., Rees, G.J., You, A.H. and Ong, D.S. (2002) Effect of dead space on avalanche speed. IEEE Transactions on Electron Devices, 49 (4). pp. 544-549. ISSN 0018-9383

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Abstract

The effects of dead space (the minimum distance travelled by a carrier before acquiring enough energy to impact ionize) on the current impulse response and bandwidth of an avalanche multiplication process are obtained from a numerical model that maintains a constant carrier velocity but allows for a random distribution of impact ionization path lengths. The results show that the main mechanism responsible for the increase in response time with dead space is the increase in the number of carrier groups, which qualitatively describes the length of multiplication chains. When the dead space is negligible, the bandwidth follows the behavior predicted by Emmons but decreases as dead space increases

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: avalanche multiplication, avalanche photodiodes, frequency response, impact ionization
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 20 Dec 2005
Last Modified: 07 Jun 2014 18:21
Published Version: http://dx.doi.org/10.1109/16.992860
Status: Published
Refereed: Yes
Identification Number: 10.1109/16.992860
URI: http://eprints.whiterose.ac.uk/id/eprint/903

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