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Theory and design of quantum cascade lasers in (111) n-type Si/SiGe

Valavanis, A., Lever, L., Evans, C. A., Ikonic, Z. and Kelsall, R. W. (2008) Theory and design of quantum cascade lasers in (111) n-type Si/SiGe. Physical Review B, 78 (3). Art. No. 035420. ISSN 1098-0121

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Abstract

Although most work towards the realization of group IV quantum cascade lasers (QCLs) has focused on valence band transitions, there are many desirable properties associated with the conduction band. We show that the commonly cited shortcomings of n-type Si/SiGe heterostructures can be overcome by moving to the (111) growth direction. Specifically, a large band offset and low effective mass are achievable and subband degeneracy is preserved. We predict net gain up to lattice temperatures of 90 K in a bound-to-continuum QCL with a double-metal waveguide, and show that a Ge interdiffusion length of at least 8 Å across interfaces is tolerable.

Item Type: Article
Copyright, Publisher and Additional Information: © 2008 The American Physical Society. This is an author produced version of a paper published in "Physical Review B". Uploaded in accordance with the publisher's self-archiving policy.
Keywords: chemical interdiffusion, conduction bands, effective mass, elemental semiconductors, Ge-Si alloys, optical waveguides, quantum cascade lasers, semiconductor materials, silicon, valence bands
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Dr Alexander Valavanis
Date Deposited: 27 Jul 2009 09:51
Last Modified: 08 Feb 2013 17:06
Published Version: http://link.aps.org/doi/10.1103/PhysRevB.78.035420
Status: Published
Publisher: American Physical Society
Refereed: Yes
Identification Number: 10.1103/PhysRevB.78.035420
URI: http://eprints.whiterose.ac.uk/id/eprint/9024

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