Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes

Ng, B.K., Yan, F., David, J.P.R. et al. (4 more authors) (2002) Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes. IEEE Photonics Technology Letters, 14 (9). pp. 1342-1344. ISSN 1041-1135

Abstract

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Authors/Creators:
  • Ng, B.K.
  • Yan, F.
  • David, J.P.R.
  • Tozer, R.C.
  • Rees, G.J.
  • Qin, C.
  • Zhao, J.H.
Copyright, Publisher and Additional Information: Copyright © 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: 4H–SiC, avalanche multiplication, excess noise, impact ionization, photodiodes, UV APD, visible–blind
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 20 Dec 2005
Last Modified: 10 Jun 2014 01:51
Published Version: http://dx.doi.org/10.1109/LPT.2002.801112
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.1109/LPT.2002.801112

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