Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes

Ng, B.K., Yan, F., David, J.P.R., Tozer, R.C., Rees, G.J., Qin, C. and Zhao, J.H. (2002) Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes. IEEE Photonics Technology Letters, 14 (9). pp. 1342-1344. ISSN 1041-1135

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Abstract

The avalanche multiplication and excess noise characteristics of thin 4H-SiC avalanche photodiodes with an i-region width of 0.1 µm have been investigated. The diodes are found to exhibit multiplication characteristics which change significantly when the wavelength of the illuminating light changes from 230 to 365 nm. These multiplication characteristics show unambiguously that β > α in 4H-SiC and that the β/α ratio remains large even in thin 4H-SiC diodes. Low excess noise, corresponding to k=0.1 in the local model where k=α/β for hole injection, was measured using 325-nm light. The results indicate that 4H-SiC is a suitable material for realizing low-noise UV avalanche photodiodes requiring good visible-blind performance.

Item Type:	Article
Copyright, Publisher and Additional Information:	Copyright © 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords:	4H–SiC, avalanche multiplication, excess noise, impact ionization, photodiodes, UV APD, visible–blind
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User:	Sherpa Assistant
Date Deposited:	20 Dec 2005
Last Modified:	08 Feb 2013 16:48
Published Version:	http://dx.doi.org/10.1109/LPT.2002.801112
Status:	Published
Refereed:	Yes
Identification Number:	10.1109/LPT.2002.801112
URI:	http://eprints.whiterose.ac.uk/id/eprint/902

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