The effects of nonlocal impact ionization on the speed of avalanche photodiodes

Hambleton, P.J., Ng, B.K., Plimmer, S.A., David, J.P.R. and Rees, G.J. (2003) The effects of nonlocal impact ionization on the speed of avalanche photodiodes. IEEE Transactions on Electron Devices, 50 (2). pp. 347-351. ISSN 0018-9383

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Published Version: http://dx.doi.org/10.1109/TED.2002.808523

Abstract

The nonlocal enhancement in the velocities of charge carriers to ionization is shown to outweigh the opposing effects of dead space, increasing the avalanche speed of short avalanche photodiodes (APDs) over the predictions of a conventional local model which ignores both of these effects. The trends in the measured gain-bandwidth product of two short InAlAs APDs reported in the literature support this result. Relatively large speed benefits are predicted to result from further small reductions in the lengths of short multiplication regions.

Item Type:	Article
Copyright, Publisher and Additional Information:	Copyright © 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords:	avalanche photodiode (APD), bandwidth, dead space, frequency response, nonequilibrium, nonlocal, velocity enhancement
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
ID Code:	900
Deposited By:	Sherpa Assistant
Deposited On:	20 Dec 2005
Last Modified:	05 Aug 2007 19:02
Published Version:	http://dx.doi.org/10.1109/TED.2002.808523
Status:	Published
Refereed:	Yes
Identification Number:	doi:10.1109/TED.2002.808523

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