Nonlocal effects in thin 4H-SiC UV avalanche photodiodes

Ng, B.K., David, J.P.R., Tozer, R.C. et al. (4 more authors) (2003) Nonlocal effects in thin 4H-SiC UV avalanche photodiodes. IEEE Transactions on Electron Devices, 50 (8). pp. 1724-1732. ISSN 0018-9383



  • Ng, B.K.
  • David, J.P.R.
  • Tozer, R.C.
  • Rees, G.J.
  • Yan, F.
  • Zhao, J.H.
  • Weiner, M.
Copyright, Publisher and Additional Information: Copyright © 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: avalanche multiplication, avalanche photodiodes (APDs), breakdown voltage, dead space, impact ionization, ionization coefficients, nonlocal effects
  • Published: August 2003
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 19 Dec 2005
Last Modified: 07 Jun 2014 02:50
Published Version:
Status: Published
Refereed: Yes
Identification Number:

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