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Temperature dependence of impact ionization in GaAs

Groves, C., Ghin, R., David, J.P.R. and Rees, G.J. (2003) Temperature dependence of impact ionization in GaAs. IEEE Transactions on Electron Devices, 50 (10). pp. 2027-2031. ISSN 0018-9383

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Abstract

The temperature dependence of electron and hole impact ionization in gallium arsenide (GaAs) has been determined from photomultiplication measurements at temperatures between 20 K and 500 K. It is found that impact ionization is suppressed by increasing temperature because of the increase in phonon scattering. Temperature variations in avalanche multiplication are shown to decrease with decreasing avalanching region width, and the effect is interpreted in terms of the reduced phonon scattering in the correspondingly reduced ionization path length. Effective electron and hole ionization coefficients are derived and are shown to predict accurately multiplication characteristics and breakdown voltage as a function of temperature in p/sup +/in/sup +/ diodes with i-regions as thin as 0.5 /spl mu/m.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: avalanche diodes, avalanche photodiodes, impact ionization, ionization coefficients, semiconductor materials measurements, temperature dependence
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 19 Dec 2005
Last Modified: 07 Jun 2014 09:04
Published Version: http://dx.doi.org/10.1109/TED.2003.816918
Status: Published
Refereed: Yes
Identification Number: 10.1109/TED.2003.816918
URI: http://eprints.whiterose.ac.uk/id/eprint/897

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