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Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors

Yee, M., Ng, W.K., David, J.P.R., Houston, P.A., Tan, C.H. and Krysa, A. (2003) Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors. IEEE Transactions on Electron Devices, 50 (10). pp. 2021-2026. ISSN 0018-9383

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Abstract

The avalanche multiplication and impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As p-i-n and n-i-p diodes over a range of temperature from 20-400 K were measured and shown to have negative temperature dependence. This is contrary to the positive temperature dependence of the breakdown voltage measured on InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors (HBTs) in this and previous works. It is shown that the collector-base dark current and current gain can be the overriding influence on the temperature dependence of breakdown in InP/In/sub 0.53/Ga/sub 0.47/As HBTs and could explain previous anomalous interpretations from the latter.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 19 Dec 2005
Last Modified: 05 Jun 2014 16:55
Published Version: http://dx.doi.org/10.1109/TED.2003.816553
Status: Published
Refereed: Yes
Identification Number: 10.1109/TED.2003.816553
URI: http://eprints.whiterose.ac.uk/id/eprint/896

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