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Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes

Ng, J.S., Tan, C.H., David, J.P.R. and Rees, G.J. (2005) Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes. IEEE Journal of Quantum Electronics, 41 (8). pp. 1092-1096. ISSN 0018-9197


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The effects of impact ionization in the InGaAs absorption layer on the multiplication, excess noise and breakdown voltage are modeled for avalanche photodiodes (APDs), both with InP and with InAlAs multiplication regions. The calculations allow for dead space effects and for the low field electron ionization observed in InGaAs. The results confirm that impact ionization in the InGaAs absorption layer increases the excess noise in InP APDs and that the effect imposes tight constraints on the doping of the charge control layer if avalanche noise is to be minimized. However, the excess noise of InAlAs APDs is predicted to be reduced by impact ionization in the InGaAs layer. Furthermore the breakdown voltage of InAlAs APDs is less sensitive to ionization in the InGaAs layer and these results increase tolerance to doping variations in the field control layer.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: avalanche photodiodes, impact ionization, noise
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 19 Dec 2005
Last Modified: 06 Jun 2014 07:33
Published Version: http://dx.doi.org/10.1109/JQE.2005.850700
Status: Published
Refereed: Yes
Identification Number: 10.1109/JQE.2005.850700
URI: http://eprints.whiterose.ac.uk/id/eprint/893

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