Growth variations and scattering mechanisms in metamorphic In0.75Ga0.25As/In-0.75 Al0.25As quantum wells grown by molecular beam epitaxy

Chen, C., Farrer, I., Holmes, S.N. et al. (4 more authors) (2015) Growth variations and scattering mechanisms in metamorphic In0.75Ga0.25As/In-0.75 Al0.25As quantum wells grown by molecular beam epitaxy. Journal of Crystal Growth, 425. 70 - 75. ISSN 1062-7995

Abstract

Metadata

Authors/Creators:
  • Chen, C.
  • Farrer, I.
  • Holmes, S.N.
  • Sfigakis, F.
  • Fletcher, M.P.
  • Beere, H.E.
  • Ritchie, D.A.
Copyright, Publisher and Additional Information: © 2015 Elsevier. This is an author produced version of a paper subsequently published in Journal of Crystal Growth. Uploaded in accordance with the publisher's self-archiving policy. Article available under the terms of the CC-BY-NC-ND licence (https://creativecommons.org/licenses/by-nc-nd/4.0/)
Keywords: Electron transport; Scattering mechanisms; Atomic force microscope; Molecular beam epitaxy; Quantum well; In0.75Ga0.25As
Dates:
  • Published: 1 September 2015
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 25 Sep 2015 14:18
Last Modified: 02 Sep 2017 16:33
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: https://doi.org/10.1016/j.jcrysgro.2015.02.038
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