Enhanced spin-relaxation time due to electron-electron scattering in semiconductor quantum wells

Leyland, W.J.H., John, G.H., Harley, R.T. et al. (6 more authors) (2007) Enhanced spin-relaxation time due to electron-electron scattering in semiconductor quantum wells. Physical Review B , 75. 165309 . ISSN 1098-0121

Abstract

Metadata

Authors/Creators:
  • Leyland, W.J.H.
  • John, G.H.
  • Harley, R.T.
  • Glazov, M.M.
  • Ivchenko, E.L.
  • Ritchie, D.A.
  • Farrer, I.
  • Shields, A.J.
  • Henini, M.
Copyright, Publisher and Additional Information: © 2007 American Physical Society. This is an author produced version of a paper subsequently published in Physical Review B. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Published: 10 April 2007
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 17 Jul 2015 10:30
Last Modified: 23 Mar 2018 03:45
Published Version: http://dx.doi.org/10.1103/PhysRevB.75.165309
Status: Published
Publisher: American Physical Society
Refereed: Yes
Identification Number: https://doi.org/10.1103/PhysRevB.75.165309
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