Baenninger, M., Ghosh, A., Pepper, M. et al. (4 more authors) (2005) Local transport in a disorder-stabilized correlated insulating phase. Physical Review B, 72. 241311(R). ISSN 1098-0121
Abstract
We report the experimental realization of a correlated insulating phase in two-dimensional (2D) GaAs∕AlGaAs heterostructures at low electron densities in a limited window of background disorder. This has been achieved at mesoscopic length scales, where the insulating phase is characterized by a universal hopping transport mechanism. Transport in this regime is determined only by the average electron separation, independent of the topology of background disorder. We have discussed this observation in terms of a pinned electron solid ground state, stabilized by the mutual interplay of disorder and Coulomb interaction.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2005 American Physical Society. This is an author produced version of a paper subsequently published in Physical Review B. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 17 Jul 2015 10:32 |
Last Modified: | 26 Mar 2018 15:53 |
Published Version: | http://dx.doi.org/10.1103/PhysRevB.72.241311 |
Status: | Published |
Publisher: | American Physical Society |
Refereed: | Yes |
Identification Number: | 10.1103/PhysRevB.72.241311 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:88072 |