Tsui, H.C.L., Goff, L.E., Rhode, S.K. et al. (6 more authors) (2015) Band gaps of wurtzite ScxGa1-xN alloys. Applied Physics Letters, 106. 132103 . ISSN 0003-6951
Abstract
Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure Sc x Ga1− x N films with 0 ≤ x ≤ 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I1- and I2-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for Sc x Ga1− x N films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in Sc x Ga1− x N band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2015 American Institute of Physics. This is an author produced version of a paper subsequently published in Applied Physics Letters. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 07 Jul 2015 14:19 |
Last Modified: | 29 Jul 2015 09:30 |
Published Version: | http://dx.doi.org/10.1063/1.4916679 |
Status: | Published |
Publisher: | American Institute of Physics |
Refereed: | Yes |
Identification Number: | 10.1063/1.4916679 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:87855 |