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Quantum well and dot self-aligned stripe lasers utilizing an InGaP optoelectronic confinement layer

Groom, K.M, Stevens, B.J, Assamoi, P.J, Roberts, J.S, Hugues, M, Childs, D.T.D, Alexander, R.R, Hopkinson, M, Helmy, A.S and Hogg, R.A (2009) Quantum well and dot self-aligned stripe lasers utilizing an InGaP optoelectronic confinement layer. IEEE Journal of Selected Topics in Quantum Electronics, 15 (3). pp. 819-827. ISSN 1077-260X

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Abstract

We demonstrate and study a novel process for fabrication of GaAs-based self-aligned lasers based upon a single over-growth. A lattice-matched n-doped InGaP layer is utilized for both electrical and optical confinements. Single-lateral-mode emission is demonstrated initially from an In0.17Ga0.83 As double quantum well laser emitting similar to 980 nm. We then apply the fabrication technique to a quantum dot laser emitting similar to 1300 nm. Furthermore, we analyze the breakdown mechanism in our devices and discuss the limitations of index guiding in our structures.

Item Type: Article
Copyright, Publisher and Additional Information: © Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Quantum well (QW) laser; semiconductor device fabrication; semiconductor laser
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
The University of Sheffield > University of Sheffield Research Centres and Institutes > Centre for Nanoscience and Technology (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 06 Jul 2009 09:20
Last Modified: 19 Sep 2014 19:58
Published Version: http://dx.doi.org/10.1109/JSTQE.2008.2011654
Status: Published
Publisher: IEEE
Refereed: Yes
Identification Number: 10.1109/JSTQE.2008.2011654
URI: http://eprints.whiterose.ac.uk/id/eprint/8745

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