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Beating of exciton-dressed states in a single semiconductor InGaAs/GaAs quantum dot

Boyle, S.J., Ramsay, A.J., Fox, A.M., Skolnick, M.S., Heberle, A.P. and Hopkinson, M. (2009) Beating of exciton-dressed states in a single semiconductor InGaAs/GaAs quantum dot. Physical Review Letters, 102 (20). Art. No.207401. ISSN 0031-9007

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Abstract

We report picosecond control of excitonic dressed states in a single semiconductor quantum dot. A strong laser pulse couples the exciton and biexciton states, to form an Autler-Townes doublet of the neutral exciton transition. The Rabi-splitting, and hence the admixture of the dressed states follows the envelope of the picosecond control laser. We create a superposition of dressed states, and observe the resulting beat: a direct measurement of a Rabi oscillation in time delay rather than the usual power domain.

Item Type: Article
Copyright, Publisher and Additional Information: © 2009 American Physical Society. This is an author produced version of a paper subsequently published in Physical Review Letters. Uploaded in accordance with the publisher's self-archiving policy.
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 29 Jun 2009 15:19
Last Modified: 08 Feb 2013 16:58
Published Version: http://dx.doi.org/10.1103/PhysRevLett.102.207401
Status: Published
Publisher: American Physical Society
Refereed: Yes
Identification Number: 10.1103/PhysRevLett.102.207401
URI: http://eprints.whiterose.ac.uk/id/eprint/8733

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