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Effective thermal conductivity of porous solder layers

Pritchard, L.S., Acarnley, P.P. and Johnson, C.M. (2004) Effective thermal conductivity of porous solder layers. IEEE Transactions on Components and Packaging Technologies, 27 (2). pp. 259-267. ISSN 1521-3331

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Abstract

Microscopic voids in the die attachment solder layers of power semiconductor devices degrade their overall thermal transfer performance. This paper presents analytical results of the effect of spherical and spheroidal void geometries on the thermal conductivity of bulk media. Analytical results are compared with axially symmetric and three-dimensional thermal simulations of single and multiple cavity defects in planar structures. The effective thermal conductivity of the die to the case attachment solder layer of two commercial metal oxide semiconductor field effect transistor (MOSFET) devices is estimated using these results, with cavity dimensions and distributions obtained by electron microscopy.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: analytical model, die attach, finite element simulation, MOSFET, packaging, power semiconductor, solder layers, thermal conductivity, voids
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 12 Dec 2005
Last Modified: 08 Feb 2013 16:48
Published Version: http://dx.doi.org/10.1109/TCAPT.2004.828584
Status: Published
Refereed: Yes
Identification Number: 10.1109/TCAPT.2004.828584
URI: http://eprints.whiterose.ac.uk/id/eprint/856

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