High contrast 3D proximity correction for electron-beam lithography: An enabling technique for the fabrication of suspended masks for complete device fabrication within an UHV environment

Rosamond, MC, Batley, J, Burnell, G et al. (2 more authors) (2015) High contrast 3D proximity correction for electron-beam lithography: An enabling technique for the fabrication of suspended masks for complete device fabrication within an UHV environment. Microelectronic Engineering, 143. 5 - 10. ISSN 0167-9317

Abstract

Metadata

Authors/Creators:
  • Rosamond, MC
  • Batley, J
  • Burnell, G
  • Hickey, B
  • Linfield, E
Copyright, Publisher and Additional Information: (c) 2015 Elsevier B.V. All rights reserved. NOTICE: this is the author’s version of a work that was accepted for publication in Microelectronic Engineering. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Microelectronic Engineering, 143, (2015) DOI 1016/j.mee.2015.01.020
Keywords: E-beam lithography; Suspended shadow mask; Angled evaporation; 3D-PEC; GenISys BEAMER; Lateral spin valve
Dates:
  • Published: 2015
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Communication & Power Networks (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 18 Mar 2015 09:33
Last Modified: 15 Jan 2018 18:55
Published Version: http://dx.doi.org/10.1016/j.mee.2015.01.020
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: https://doi.org/10.1016/j.mee.2015.01.020

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